Selective etching process

Details Selective etching process Selective etching process

1988-02-10

1989-10-03

Hoch, Raymond

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 20419232, 204298, H01L 21306, C03C 1500

Patent

active

048714208

ABSTRACT:
By adjusting the AC field conditions, i.e., by grounding the environment of a substrate being etched with a chlorine-containing plasma, a significant increase in etch selectivity is achieved. By applying a similar AC field adjustment to the reaction chamber surfaces, excellent etch uniformity is achieved in conjunction with excellent selectivity.

REFERENCES:
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patent: 4397724 (1983-08-01), Moran
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4400235 (1983-08-01), Coquin et al.
patent: 4419201 (1983-12-01), Levinstein et al.
patent: 4422897 (1983-12-01), Horwitz
patent: 4473455 (1984-09-01), Dean et al.
patent: 4482419 (1984-11-01), Tsukada et al.
patent: 4534816 (1985-08-01), Chen et al.
Mucha, J. A., "The Gases of Plasma Etching:Silicon-Based Technology", Solid State Technology, Mar. 1985, pp. 123-127.

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