Selective etching process

Details Selective etching process Selective etching process

1994-02-02

1997-06-24

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438439, H01L 21762

Patent

active

056413831

ABSTRACT:
According to the selective etching process, when two different material layers, e.g. a first material layer (a silicon nitride film) and a second material layer (a silicon film) are coexistent, the etch selectivity of the second material layer with regard to the wet etch for the first material layer, an object of etch, can be improved by transforming the entire or partial surface of the second material layer with a third material (an oxidizing agent) having high selectivity for the first material layer prior to or during the wet etch. As a result, the second material layer can be prevented from being damaged.
In addition, when the inventive process is applied to the LOCOS process, it is preventive of the substrate damage caused by the destruction of the pad oxide film resulting from so-called white ribbon phenomenon.

REFERENCES:
patent: 3715249 (1973-02-01), Panousis et al.
patent: 4749640 (1988-06-01), Tremont et al.
patent: 4829025 (1989-05-01), Iranmanesh
patent: 4971654 (1990-11-01), Schnegg et al.
Wolf, Stanley, Ph.D., Silicon Processing for the VLSI ERA, vol. 2: Process Integration (Lattice Press, 1990), p. 27.
"Etching Rates of Silicon Dioxide, and Silicon Nitride (Si.sub.3 N.sub.4) Insulating Films in Ammonia-Hydrogen Peroxide Cleaning Process"; 1983'; Watanabe et. al.; Proc. Electrochemical Soc., 83-8 (Proc. Symp. Silicon Nitride Thin Insul. Films); abstract only.

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