Fishing – trapping – and vermin destroying
Patent
1987-07-16
1989-10-17
Hearn, Brian E.
Fishing, trapping, and vermin destroying
148DIG51, 156643, 2041921, 204298, 427 38, 118620, H01L 21306
Patent
active
048747238
ABSTRACT:
A thin film etching process, wherein the rate of deposition of a robust sidewall passivant is controlled so that passivants can be continually deposited on the sidewalls of the resist pattern to change the geometry of the resist pattern during the processing step. That is, the existing pattern is modified as if a sidewall filament has been deposited on it, which can be advantageous for many purposes, without the added process complexity required by a sidewall filament process.
REFERENCES:
patent: 3765763 (1973-10-01), Nygaard
patent: 4293249 (1981-10-01), Whelan
patent: 4306292 (1981-12-01), Head
patent: 4372807 (1983-02-01), Vossen, Jr. et al.
patent: 4439243 (1984-03-01), Titus
patent: 4439244 (1984-03-01), Allevato
patent: 4447469 (1984-05-01), Peters
patent: 4465898 (1984-08-01), Orcutt et al.
patent: 4493977 (1985-01-01), Arai et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4581101 (1986-04-01), Senoue et al.
patent: 4609103 (1986-09-01), Bimer et al.
patent: 4673456 (1987-06-01), Spencer et al.
M. E. Burba, E. Degenkolb, S. Henck, M. Jabasky, E. D. Junbluth, and R. Wilson, "Selective Dry Etching of Tungsten for VLSI Metallization", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 133, No. 10, Oct., 1986, pp. 2113-2118.
Davis et al., "Reactive Ion Etching of Thick CVD Tungsten Films", 1988 Proceedings Fifth Internat'l IEEE VLSI Multilevel Interconnection Conference, New York, IEEE Jun. 1988, pp. 165-171.
Adachi, S., "Reactive Ion Etching of Tungsten Films Sputter Deposited on GaAs", J. Electrochem. Soc.: Solid-State Science and Technology, Dec. 1985, vol. 132, pp. 2980-2989.
Tang et al., "Tungsten Etching in CF.sub.4 and SF.sub.4 Discharges", Journal of the Electrochemical Society, Solid-State Science and Technology, Jan. 1984, pp. 115-120.
Susa, "Comparisons of GaAs, Tungsten, and Photoresist Etch Rates and GaAs Surfaces Using Rie with CF.sub.4, CF.sub.4 +N.sub.2, and SF.sub.6 +N.sub.2 Mixtures", J. Electrochem. Soc.: Solid-State Science and Technology, Nov. 1985, vol. 132, No. 11, pp. 2762-2767.
I. Sakai et al., "Sealing Concept of Elastic Metal Gasket, `Helicoflex`", 32 Vacuum 33 (1982).
Hajime Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", 26 IEEE Transactions on Nuclear Science 4000 (1979).
R. B. Fleming et al., "Development of Bakable Seals for Large Non-Circular Ports on the Tokamak Fusion Test Reactor", 17 Journal of Vacuum Science and Technology 337 (1980).
M. A. Accomazzo, K. L. Rubow, and B. Y. H. Liu, "Ultrahigh Efficiency Membrane Filters for Semiconductor Process Gases", Solid St. Tech. 27(3), pp. 141-146, (1984).
M. E. Burba et al., "Selective Dry Etching of Tungsten for VLSI Metallization", J. Electrochem. Soc.: Solid State Science and Technology, Oct. 1986, pp. 2113-2118.
A. Iwata et al., "A New Tungsten Gate Process for VLSI Applications", IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984 pp. 1174-1179.
C-K. Hu, et al., "Reactive Ion Etching of CVD and Sputtered Tungsten Films", IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y. 10598, two pages.
IBM, "Anisotropic and Selective Etching of Tungsten Silicide-Tungsten-Tungsten-Silicide Composite Stack", IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, p. 1151.
Helicoflex Company, Catalog H. 001, 002, Resilient Metal Seals and Gaskets.
P. D. Richard et al., "Remote Plasma Enhanced CVD Deposition of Silicon Nitride and Oxide for Gate Insulators in (In, Ga)As FET Devices", J. Vac. Sci. Technol. A3(3), May/Jun. 1985, pp. 867-872.
J. Praraszczak, et al., "Methods of Creation and Effect of Microwave Plasmas Upon the Etching of Polymers and Silicon", Microelectronic Engineering 3 (1985), pp. 397-410.
C. Arnone, et al., Study of Photo-Induced Thin Film Growth on CdS Substrates, Mat. Res. Soc. Symp. Proc., vol. 29 (1984), pp. 275-281.
G. Lucovsky, et al., "Deposition of Silicon Dioxide and Silicon Nitride by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technology, A4(3), May/Jun. 1986, pp. 681-688.
D. E. Tsu, et al., "Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. A4(3), May/Jun. 1986, pp. 480-485.
Advertisement, "Dry Stripper", Samco/Marck, Solid State Technology, 30 (3) Mar. 1987, p. 45.
F. Paneth et al., "Paneth's Lead-Mirror Experiment", Ber. Dt. Chem. Ges. B62 1335 (1929).
G. Kasper and H. Y. Wen, "A Gas Filtration System for 10.sup.5 Particles/cm.sup.3 ", Aerosol Science and Technology 5(2), pp. 167-185 (1986).
M. L. Malczewski, J. D. Borkman, and G. T. Vardian, "Measurement of Particulates in Filtered Process Gas Streams", Sol. St. Tech. 29(4), pp. 151-157 (1986).
C. M. Van Atta, "Vacuum Science and Engineering", McGraw-Hill, New York, pp. 31.
R. A. Bowling, "An Analysis of Adhesion on Semiconductor Surfaces", Journal of the Electrochemical Society 132 (9), pp. 2208-2214 (1985).
"Grooves Reduce Aircraft Drag", NASA Tech Briefs 5(2), p. 192.
"Mission Accomplished", NASA Tech Briefs 117(3), pp. 82-83 (1987).
Hiroyoki Yokoyama, "Photo Induced Surface Morphology Improvement and Preferential Orientation Enhancement in Film Deposition of Evaporated Zn5", Appl. Phys. Lett. 49(20), 17 Nov. 1986, pp. 1354-1356.
J. B. Mullin, et al., "Ultraviolet Assisted Growth of II-VI Compounds", J. Vac. Sci. Technol. A, vol. 4, No. 3, May/Jun. 1986, pp. 700-703.
S. Oda, et al., "Hydrogen Radical Assisted Chemical Vapor Deposition of ZnSe", Appl. Phys. Lett. 48(1), 6 Jan. 1986, pp. 33-35.
R. A. Levy et al., "Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications", J. Electrochem. Soc.: Reviews and News, Feb. 1987, pp. 37C-49C.
Hajime Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", J. Vac. Sci. Technol., 15(6) Nov./Dec. 1978, pp. 1853-1854.
S. Mehta, et al., "Blanket CVD Tungsten Interconnect for VLSI Devices", Jun. 9-10, 1986, V-MIC Conf., pp. 418-435.
Carl E. Larson, et al., "Chemical Vapor Deposition of Gold", Aug. 11, 1986, IBM Almaden Research Center, San Jose, CA. 91520, p. 266.
Paul A. Robertson, et al., "Photo Enhanced Deposition of Silicon Oxide Thin Films Using an Internal Nitrogen Discharge Lamp", Fall 1986, Materials Research Society Symposium, Dec., 1986.
K. Tsujimoto, et al., "A New Sidewall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18.sup.th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 229-232.
Robert R. Krchnavek, et al., "Photo Deposition Rates of Metal for Metal Alkyls", J. Vac. Sci. Technol. B5(1), Jan./Feb. 1987, pp. 20-26.
J. F. Gibbons, et al., "Limited Reacton Processing: Silicon Epitaxy", Appl. Phys. Lett. 47(7), 1 Oct. 1985, pp. 721-723.
A. Yamada, et al., "Photochemical Vapor Deposition of Single-Crystal Silicon at a Very Low Temperature of 200.degree. C.", Extended Abstracts of the 18.sup.th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 217-220.
D. L. Flamm, et al., "Reaction of Fluorine Atoms with SiO.sub.2 ", J. Appl. Phys. 50(10), Oct. 1979, pp. 6211-6213.
D. L. Flamm, et al., "The Reaction of Fluorine Atoms with Silicon", J. Appl. Phys. 52(6), 1981, pp. 3633-3639.
G. Smolinski, et al., "The Plasma Oxidation of CF.sub.4 in a Tubular-Alumina Fast-Flow Reactor", J. Appl. Phys. 50(7), Jul. '79, pp. 4982-4987.
S. Nishino, et al., "SiO.sub.2 Deposition by Photo-Initiation", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 209-212.
C. J. Mogab, "Plasma Etching of Si and SiO.sub.2 --The Effect of Oxygen Additions to CF.sub.4 Plasmas", J. Appl. Phys., vol. 49, No. 7, Jul., 1978, pp. 3796-3803.
C. J. Howard, J. Phys. Chem., vol. 83, p. 6 (1979).
H. Schlichting, "Boundary-Layer Theory", 7.sup.th Edition, McGraw Hill, New York, (1979).
S. V. Nguyen, "Plasma Assisted Chemical Vapor Deposited Thin Films for Microelectronics Applications", J. Vac. Sci. Technol. B4(
Carter Duane E.
Crank Sue E.
Davis Cecil J.
Jucha Rhett B.
Hearn Brian E.
Honeycutt Gary C.
Merrett Rhys
Pawlikowski Beverly A.
Sharp Melvin
LandOfFree
Selective etching of tungsten by remote and in situ plasma gener does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selective etching of tungsten by remote and in situ plasma gener, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective etching of tungsten by remote and in situ plasma gener will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1743532