Selective etching of refractory metal nitrides

Details Selective etching of refractory metal nitrides Selective etching of refractory metal nitrides

1994-02-18

1995-05-30

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437200, 437192, B44C 122, H01L 2102

Patent

active

054198054

ABSTRACT:
A method of selectively etching a layer of a refractory metal nitride, with application to formation of TiN local interconnects for VLSI integrated circuits, and particularly a method of selectively etching TiN relative to a refractory metal silicide. The method comprises the step of heating surfaces of the substrate to a selected etch temperature between 50.degree. C. and 200.degree. C. in a non-reactive gas and then exposing the heated substrate to reactive halogen species of a plasma having ion energies substantially less than 100 eV, and preferably below 30 eV. The etch selectivity is controlled by selecting a relatively low ion energy to reduce ion bombardment and heating effects during etching, and independently controlling the etch temperature in the heating step. The reactive species of the plasma are preferably generated by electron cyclotron resonance (ECR) excitation of a halocarbon containing gas, and heating comprises ion bombardment with a non-reactive gas. For etching TiN, preferred halocarbon containing gases are CF4 and C2F6, and mixtures thereof, whereby optimum etch selectivity is obtained with reactive species having ion energies less than 30 eV, and at an etch temperature in the range 100.degree. to 120.degree. C.

REFERENCES:
patent: 5010032 (1991-04-01), Tang et al.
patent: 5320971 (1994-06-01), Eklund et al.

Affiliated with

Also associated with

Rating

Selective etching of refractory metal nitrides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective etching of refractory metal nitrides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective etching of refractory metal nitrides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-359247