Selective etching of oxides

Details Selective etching of oxides Selective etching of oxides

1997-11-10

1999-11-23

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438738, 438743, 252 791, 134 13, H01L 21302

Patent

active

059900199

ABSTRACT:
A surface having exposed doped silicon dioxide such as BPSG is cleaned with a vapor phase solution that etches thermal oxide at least one-third as fast as it etches the exposed doped silicon dioxide, resulting in more thorough cleaning with less removal of the exposed doped silicon dioxide. Specific applications to formation of container capacitors are disclosed. Preferred cleaning vapor phase solutions include about 1% water, about 5% hydrogen fluoride, and about 5% ammonias. The vapor phase solution is also useful in cleaning methods in which a refractory metal silicide is exposed to the cleaning vapor phase solution such as in cleaning prior to spacer formation or prior to a gate stack contact fill, in which case about 500 PPMV water, about 2% hydrogen fluoride, and about 2% ammonia is most preferred.

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