Selective etching of low-k dielectrics

Details Selective etching of low-k dielectrics Selective etching of low-k dielectrics

2007-06-12

2007-06-12

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C216S067000

Reexamination Certificate

active

10341693

ABSTRACT:
The present invention provides a low-k dielectric etching process with high etching selectivities with respect to adjacent layers of other materials, such as an overlying photoresist mask and an underlying barrier/liner layer. The process comprises the step of exposing a portion of the low-k dielectric layer to a plasma of a process gas that includes a fluorocarbon gas having a relatively low fluorine to carbon ratio, a nitrogen-containing gas, and an inert gas, wherein a volumetric flow ratio of the nitrogen-containing gas to the fluorocarbon gas is greater than about 20:1. The process can be used to over etch the low-k dielectric layer to provide improved selectivity to the photoresist mask and the barrier/liner layer, reduced striations and reduced CD loss as compared with conventional low-k dielectric etching processes.

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