Selective etching of low-k dielectrics

Details Selective etching of low-k dielectrics Selective etching of low-k dielectrics

2005-05-24

2005-05-24

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S712000, C438S723000, C252S079100

Reexamination Certificate

active

06897154

ABSTRACT:
The present invention provides a low-k dielectric etching process with high etching selectivities with respect to adjacent layers of other materials, such as an overlying photoresist mask and an underlying barrier/liner layer. The process comprises the step of exposing a portion of the low-k dielectric layer to a plasma of a process gas that includes a fluorocarbon gas, a nitrogen-containing gas, and an inert gas, wherein the volumetric flow ratio of inert:fluorocarbon gas is in the range of 20:1 to 100:1, and the volumetric flow ratio of fluorocarbon:nitrogen-containing gas is selected to provide a low-k dielectric to photoresist etching selectivity ratio greater than about 5:1 and a low-k dielectric etch rate higher than about 4000 Å/min.

REFERENCES:
patent: 5814563 (1998-09-01), Ding et al.
patent: 5843847 (1998-12-01), Pu et al.
patent: 6284149 (2001-09-01), Li et al.
patent: 6287990 (2001-09-01), Cheung et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6485988 (2002-11-01), Ma et al.

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