Selective etching method, optoelectronic device and its fabricat

Details Selective etching method, optoelectronic device and its fabricat Selective etching method, optoelectronic device and its fabricat

1994-10-05

1995-06-13

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437232, 437234, B44L 122

Patent

active

054239435

ABSTRACT:
When a ZnSe, ZnTe or ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b (0<a<1, 0<b<1) layer provided on a Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y (0<x<1, 0<y<1, a<x) layer is selectively etched by a dry etching method such as an RIE method, the Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y layer is used as an etching stoppig layer. Thus, selective etching of the ZnSe, ZnTe, ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b layer can be conducted with excellent controllability and reproducibility.

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