Selective etching method for tungsten and tungsten alloys

Details Selective etching method for tungsten and tungsten alloys Selective etching method for tungsten and tungsten alloys

1990-08-23

1992-04-28

Weinstein, Steven

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, C23F 100

Patent

active

051085429

ABSTRACT:
A method of plasma etching tungsten containing films such as is found in semiconductor interconnects. The etch method is conducted under reactive ion etch conditions in a plasma etch reactor using a gas mixture of CF.sub.4 and O.sub.2. The O.sub.2 preferably makes up 20% to 60% of the gas mixture by volume. The etch method is highly selective to titanium disilicide, titanium nitride and silicon dioxide.

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