Selective etching method for stacked organic film

Details Selective etching method for stacked organic film Selective etching method for stacked organic film

1997-09-15

1999-11-02

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

430313, 430325, H01L 2100

Patent

active

059763957

ABSTRACT:
A selective etching method for a stacked organic film which is capable of effectively removing an organic anti-reflection layer without a loss of a photoresist film before etching a base layer such as a wafer, etc., by using an organic anti-reflection layer. The method includes the steps of forming a first organic film on a base layer, forming a second organic film on the first organic film, patterning the second organic film, and exposing a predetermined portion of the first organic film, hardening the first organic film and the patterned second organic film, and etching the exposed first organic film and exposing the base layer.

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patent: 5302240 (1994-04-01), Hori et al.
patent: 5632910 (1997-05-01), Nagayama
patent: 5679499 (1997-10-01), Yamamori
patent: 5807790 (1998-09-01), Gupta et al.

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