Selective etch process

Details Selective etch process Selective etch process

1997-07-21

1999-05-25

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 66, 216 67, 216 79, 252 791, 438733, H01L 2100

Patent

active

059069503

ABSTRACT:
Disclosed is an etch process wherein hydrogen monoiodide (HI) ions are employed to bombard a patterned film, thereby creating geometric features in the patterned film with substantially anisotropic sidewalls. The etch process has a high selectivity to oxide, allowing the etch process to terminate on a thin pad oxide, especially when using a two step etch process. The etch process is also highly selective to photoresist, further enhancing the resulting anisotropic nature of the geometrical feature sidewalls.

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