Selective etch method

Details Selective etch method Selective etch method

1990-11-21

1992-06-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156662, 156667, 252 791, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

051222256

ABSTRACT:
The invention discloses a method for selectively etching a first material at a faster rate than a second material, where both materials are incorporated on the surface of a semiconductor. The surface is disposed (step 100) in a plasma etcher. A reactant is flowed into the etcher (102). The etch agents are chosen so the chemical products created by a reaction between the etchant and the first material are volatile and the chemical products created by a reaction between the etchant and the second material are non-volatile. A reaction is then ignited (104) and the first material is etched (106). One embodiment discloses a method for forming a local interconnect.

REFERENCES:
patent: 4675073 (1987-06-01), Douglas
patent: 4793896 (1988-12-01), Douglas
patent: 4821085 (1989-04-01), Haken et al.
patent: 4863559 (1989-09-01), Douglas
patent: 4957590 (1990-09-01), Douglas

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