Selective epitaxy vertical integrated circuit components

Details Selective epitaxy vertical integrated circuit components Selective epitaxy vertical integrated circuit components

2004-01-27

2008-05-13

Landau, Matthew C. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257SE29252, C257SE27086

Reexamination Certificate

active

07372091

ABSTRACT:
Integrated circuit components are described that are formed using selective epitaxy such that the integrated circuit components, such as transistors, are vertically oriented. These structures have regions that are doped in situ during selective epitaxial growth of the component body. These components are grown directly in electrical communication lines. Moreover, these components are adapted for use in memory devices and are believed to not require the use of shallow trench isolation.

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