Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1984-06-25
1986-04-01
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156644, 156646, 156DIG111, C30B 2304
Patent
active
045796211
ABSTRACT:
Disclosed herein is a selective epitaxial growth method for forming an opening, utilizing anisotropic dry etching, in a silicon oxide film formed on a silicon substrate and epitaxially growing a silicon layer selectively in the opening. The anisotropic dry etching is performed employing a mixed gas of carbon tetrafluoride and hydrogen, and the wall surface of the opening is perpendicular to the major surface of the silicon substrate. The epitaxial growth is achieved under a temperature of 900.degree. to 1100.degree. C. utilizing a mixed gas of a low pressure under 100 Torr. containing dichlorosilane as a silicon source and hydrogen as a carrier gas. A silicon layer thus obtained contains substantially no lattice defects such as a stacked fault.
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patent: 4482422 (1984-11-01), McGinn et al.
"A New Isolation Technology for Bipolar Devices by Low Pressure Selective Silicon Epitaxy", S. Hine et al., pp. 116-117.
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Hayes et al., Solid State Technology, v. 23, No. 11, pp. 71-78.
Ru et al., J. Vac. Sci. Technology, Nov./Dec. 1981, 1385-1389.
Lam et al., Conference International Electron Devices Meeting, Technical Digest, Washington, D.C., Dec. 8-10, 1980.
Bernstein Hiram H.
Mitsubishi Denki & Kabushiki Kaisha
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