Selective encapsulation, controlled atmosphere annealing for III

Details Selective encapsulation, controlled atmosphere annealing for III Selective encapsulation, controlled atmosphere annealing for III

1981-05-04

1983-08-02

Roy, Upendra

Metal treatment

Compositions

Heat treating

29590, 29576B, 148175, 148187, 357 61, 357 91, H01L 21265, H01L 21324

Patent

active

043964370

ABSTRACT:
A post-ion implantation annealing technique is provided to remove implantation damage in the active region of III-V (e.g., GaAs) semiconductor devices formed in a III-V semi-insulating substrate and separated by a field region. The technique involves applying a dielectric encapsulation selectively over the device active area and annealing in a controlled reducing atmosphere which includes the Group V element (e.g., arsenic). The dielectric encapsulant over the active region permits migration of the species employed to render the substrate semi-insulating (e.g., Cr in GaAs substrates), thereby resulting in high carrier mobility in the active region. Without encapsulation, migration of the species in the field region is substantially suppressed, thereby resulting in good inter-device isolation.

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patent: 4327475 (1982-05-01), Asai et al.
patent: 4357180 (1982-11-01), Molnar
Kasahara et al., J. Appl. Phys. 50, (1979), 541.
Malborn, J. Electrochem. Soc. 123, (1976), 1413.
Lee et al., in Ion Implantation in Semiconductors, 1976, Ed. Chernow et al., Plenum, N.Y., p. 115.
Donnelly et al., Solid State Electronics, 20, (1977), 273.

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