Selective dry etching of tantalum and tantalum nitride

Details Selective dry etching of tantalum and tantalum nitride Selective dry etching of tantalum and tantalum nitride

2005-09-06

2005-09-06

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S629000, C438S643000, C438S648000, C438S653000, C438S656000, C438S685000, C438S687000, C438S710000, C438S720000

Reexamination Certificate

active

06939795

ABSTRACT:
The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers (30) are often used in semiconductor manufacturing. The semiconductor substrate is exposed to a reducing plasma chemistry which passivates any exposed copper (40). The tantalum nitride films are selectively removed using an oxidizing plasma chemistry.

REFERENCES:
patent: 6086777 (2000-07-01), Cheng et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6429128 (2002-08-01), Besser et al.
patent: 2002/0175419 (2002-11-01), Wang et al.
patent: 1 156 133 (2001-11-01), None
Ibbotson, D.E. et al., “Selective Interhalogen Etching of Tantalum Compounds and Other Semiconductor Materials,” Applied Physics Letters, American Institute of Physics, New York, USA, vol. 46, No. 8, Apr. 15, 1985, pp. 794-796, XP000816727.

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