Selective dry-etching of bi-layer passivation films

Details Selective dry-etching of bi-layer passivation films Selective dry-etching of bi-layer passivation films

1993-09-30

1995-07-18

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

H01L 2100

Patent

active

054338239

ABSTRACT:
This invention is directed to a plasma etching process for the etching of bi-layer passivation films comprising silicon nitride and silicon oxide wherein the etching gas is a selectivity enhancing ratio of gases selected from the group consisting of CHF.sub.3 /SF.sub.6, CHF.sub.3 /O.sub.2, and CHF.sub.3 /C.sub.2 F.sub.6.

REFERENCES:
patent: 4372034 (1983-02-01), Bohr
patent: 4484979 (1984-11-01), Stocker
patent: 4580330 (1986-04-01), Pollack et al.
patent: 4690728 (1987-09-01), Tsang et al.
patent: 5013398 (1991-05-01), Long
patent: 5164331 (1992-11-01), Lin et al.
patent: 5225363 (1993-07-01), Reismenschneider et al.

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