Selective dry etching method for compound semiconductor and prod

Details Selective dry etching method for compound semiconductor and prod Selective dry etching method for compound semiconductor and prod

1993-09-24

1994-12-06

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 1566591, 156662, 252 791, 437234, H01L 21306, B44C 122

Patent

active

053707672

ABSTRACT:
A selective ECR dry etching method for etching compound semiconductors includes dry etching an In-containing compound semiconductor material in an ECR plasma of a Cl.sub.2 /He mixture with a Cl.sub.2 /(He+Cl.sub.2) ratio from 0.05 to 0.2 and a gas pressure below 4.0.times.10.sup.-4 Torr. A selective ECR dry etching method includes dry etching a compound semiconductor material including no Al selectively with respect to a compound semiconductor material including Al using a plasma in an Cl.sub.2 /He/O.sub.2 mixture with a ratio of Cl.sub.2 /(He+Cl.sub.2) ratio within 0.05 to 0.2 and O.sub.2 less than 30% of the Cl.sub.2 gas at a gas pressure below 5.0.times.10.sup.-4 Torr.

REFERENCES:
patent: 5024958 (1991-06-01), Awano
Kosugi et al, "Selective Photochemical Dry Etching Of GaAs/AlGaAs And InGaAs/InAlAs Heterostructures", Electronics Letters, vol. 27, No. 23, Nov. 1991, pp. 2113-2114.
Miyakuni et al, "Low Damage Etching Of InGaAs/AlGaAs By the ECR Plasma With Cl.sub.2 /He Mixture For HBTs", 19th International Symposium on Gallium Arsenide and Related Compounds, Oct. 1992.

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