Selective doping and thermal annealing method for forming a...

Details Selective doping and thermal annealing method for forming a... Selective doping and thermal annealing method for forming a...

2007-10-23

2007-10-23

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S371000, C257SE29127, C438S199000, C438S549000

Reexamination Certificate

active

11043621

ABSTRACT:
A semiconductor product and a method for fabricating the semiconductor product provide a pair of gate electrodes formed with respect to a pair of doped wells within a semiconductor substrate. One of the gate electrodes is formed of a first gate electrode material having a first concentration of an electrically active dopant therein. A second of the gate electrodes is formed of the first gate electrode material having less than the first concentration of the electrically active dopant therein, and formed at least partially as an alloy with a second gate electrode material. The semiconductor product may be formed with enhanced efficiency.

REFERENCES:
patent: 2006/0017112 (2006-01-01), Wang et al.

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