Selective delamination of thin-films by interface adhesion...

Details Selective delamination of thin-films by interface adhesion... Selective delamination of thin-films by interface adhesion...

2006-03-28

2006-03-28

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S288000

Reexamination Certificate

active

07018877

ABSTRACT:
Various exemplary embodiments of the systems and methods according to this invention provide for a method of producing a self-aligned thin film transistor, the transistor including a metal layer covering at least a portion of a doped layer, the doped layer covering at least a portion of a dielectric layer, a strain being created in the metal layer, the method includes etching an exposed portion of the doped layer to create a defect at an interface between the doped layer and the dielectric layer so as to initiate a delamination of the doped layer from the dielectric layer. The delamination of the doped layer from the dielectric layer is stopped when the defect propagates into an interface between the doped layer and the dielectric layer that has an adhesive energy that is greater than the strain of the metal layer.

REFERENCES:
patent: 4663820 (1987-05-01), Ionescu
patent: 5527726 (1996-06-01), Possin et al.
patent: 5795821 (1998-08-01), Bacchetta et al.
patent: 6124185 (2000-09-01), Doyle
patent: 6524971 (2003-02-01), Fetter et al.

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