Selective chemical vapor deposition of a metallic film on the si

Details Selective chemical vapor deposition of a metallic film on the si Selective chemical vapor deposition of a metallic film on the si

1990-04-16

1992-04-14

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427309, 427250, 427253, 4271261, 4271262, 427 55, 427 531, 427314, 4272552, 4272551, C23C 1600, B05D 304

Patent

active

051046946

ABSTRACT:
A selected chemical vapor deposition method includes the steps of arranging a substrate having a silicon surface and an insulator surface in a reaction chamber, supplying a gas consisting of a silicon hydride in said reaction chamber to reduce and remove a native oxide film on said silicon surface by said gas, and supplying a source gas in said reaction chamber to selectively form a film on only said silicon surface.

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patent: 4668530 (1987-05-01), Reif et al.
patent: 4956204 (1990-09-01), Amazawa et al.
Ilderem et al., "Very Low Pressure Chemical Vapor Deposition Process for Selective Titanium Silicide Films", App. Phys. Lett.53 (8), 22 Aug. 1988, 1988 American Institute of Physics, pp. 687-689.
Junichi Murota et al., "Low-Temperature Silicon Selective Deposition and Epitaxy on Silicon Using the Thermal Decomposition of Silane Under Ultraclean Environment", Appl. Phys. Lett. 54 (11), 13 Mar. 1989, 1989 American Institute of Physics, pp. 1007-1009.
Bouteville et al., "LPCVD of Titanium Disilicide", J. Electrochem. Soc.: Solid-State Science and Technology, Aug. 1987, pp. 2080-2083.
Ilderem et al., "Optimised Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide", J. Electrochem. Soc.: Solid-State Science and Technology, Oct. 1988, pp. 2590-2596.
Kunio Saito et al., "Effect of Silicon Surface Cleaning on the Initial Stage of Selective Titanium Silicide Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 29, No. 1, Jan., 1990, pp. L185-L187.

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