Selective application of voltages for testing storage cells in s

Details Selective application of voltages for testing storage cells in s Selective application of voltages for testing storage cells in s

1989-04-10

1992-10-20

Bowler, Alyssa H.

Static information storage and retrieval

Read/write circuit

Testing

365149, 365226, 371 214, G11C 700, G11C 11413, G11C 2900

Patent

active

051576295

ABSTRACT:
A dynamic RAM is provided with a plurality of 1-MOSFET memory cells, each having a storage capacitor and a switching MOSFET coupled to one electrode of the storage capacitor. The other electrode of each of the storage capacitors is coupled to a switching circuit which controls the voltage which is applied to the capacitor. The switching circuit is, in turn, coupled to both a voltage generating circuit (which preferably provides a voltage of 1/2 Vcc) and a voltage supply circuit which is set to provide predetermined test voltages. Thus, by operating the switching circuit, a voltage of 1/2 Vcc can be applied to the memory cell capacitors during normal operation of the dynamic RAM, and the predetermined test voltages can be applied to the memory cell capacitors during a testing operation.

REFERENCES:
patent: 4418403 (1983-11-01), O'Toole
patent: 4468759 (1984-08-01), Kung et al.
patent: 4712195 (1987-12-01), Finger
patent: 4725985 (1988-02-01), Ogura et al.
patent: 4839865 (1989-06-01), Sato et al.

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