Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1987-03-18
1988-03-29
Bashore, S. Leon
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156646, 156656, 156657, 156662, 1566591, 252 791, B44C 122, H01L 21308, C23F 112
Patent
active
047341572
ABSTRACT:
A composition and method for anistropically etching polysilicon or silicides with excellent selectivity to an underlying layer of an oxide or nitride of silicon is disclosed. A mixture of CClF.sub.3 or CCl.sub.2 F.sub.2 and ammonia is employed at moderate pressures in a reactive ion etching chamber.
REFERENCES:
patent: 3940506 (1976-02-01), Heinecke
patent: 3984301 (1976-10-01), Matsuzaki et al.
patent: 4208241 (1980-06-01), Harshbarger et al.
patent: 4211601 (1980-07-01), Mogab
patent: 4283249 (1981-08-01), Ephrath
patent: 4326911 (1982-04-01), Howard et al.
patent: 4352724 (1982-10-01), Sugishima et al.
patent: 4353777 (1982-10-01), Jacob
patent: 4397724 (1983-08-01), Moran
patent: 4412119 (1983-11-01), Komatsu et al.
patent: 4427516 (1984-01-01), Levinstein et al.
patent: 4431477 (1984-02-01), Zajac
patent: 4444617 (1984-04-01), Whitcomb
patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4473436 (1984-09-01), Beinvogl
patent: 4528066 (1985-07-01), Merkling et al.
Bondur et al., "RF Reactive Ion Etching of Polysilicon with Fluorocarbon Gas", IBM T.D.B., vol. 18, No. 6, p. 1897 (Nov. 1975).
Bennett, "Highly Selective Etching of SiO.sub.2 using CClF.sub.3 +H.sub.2, IBM T.D.B., vol. 25, No. 9, p. 4589 (Feb. 1983).
Leahy, "Directional Plasma Etching of Polysilicon in a CF.sub.3 Cl Discharge", Electrochemical Soc. 1981 meeting, Abstract #271.
Mogab et al., "Anisotropic Plasma Etching of Polysilicon", J. Vac. Sci. Technol., 17(3), May/June 1980, pp. 721-730.
Carbaugh Susanna R.
Ng Hung Y.
Polavarapu Murty S.
Stanasolovich David
Anderson Andrew J.
Bashore S. Leon
Hoel John E.
International Business Machines - Corporation
Klitzman Maurice H.
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