Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Reexamination Certificate
2011-03-01
2011-03-01
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
C438S603000, C438S604000, C257SE21085, C257SE21092, C257SE21102, C257SE21126, C257SE21127, C257SE21134, C257SE21311, C257SE21319
Reexamination Certificate
active
07897489
ABSTRACT:
A method of selectively attaching a capping agent to an H-passivated Si or Ge surface is disclosed. The method includes providing the H-passivated Si or Ge surface, the H-passivated Si or Ge surface including a set of covalently bonded Si or Ge atoms and a set of surface substitutional atoms, wherein the set of surface substitutional atoms includes at least one of boron atoms, aluminum atoms, gallium atoms, indium atoms, tin atoms, lead atoms, phosphorus atoms, arsenic atoms, sulfur atoms, and bismuth atoms. The method also includes exposing the set of surface functional atoms to a set of capping agents, each capping agent of the set of capping agents having a set of functional groups bonded to a pair of carbon atoms, wherein the pair of carbon atoms includes at least one pi orbital bond, and further wherein a covalent bond is formed between at least some surface substitutional atoms of the set of surface substitutional atoms and at least some capping agents of the set of capping agents.
REFERENCES:
patent: 2005/0008880 (2005-01-01), Kunze et al.
patent: 2007/0196297 (2007-08-01), Ruckenstein et al.
patent: 2008/0160265 (2008-07-01), Hieslmair et al.
patent: 2008/0160733 (2008-07-01), Hieslmair et al.
The Search Report and Written Opinion issued in PCT/US2008/067233 mailed Jun. 2, 2009.
Buriak, Jillian M., “Organometallic Chemistry on Silicon and Germanium Surfaces,” Chemical Reviews, ACS, Washington D.C., vol. 102, No. 5, May 1, 2002, pp. 1271-1308.
Hua, Fengjun et al., “Efficient Surface Grafting of Luminescent Silicon Quantum Dots by Photoinitiated Hydrosilylation, ”Langmuir, vol. 21, May 26, 2005, pp. 6054-6062.
Lee, Hyojin et al., “Surface-Stabilized Amorphous Germanium Nanoparticles for Lithium-Storage Material,” J. Phys. Chem. B, vol. 109, No. 44, Nov. 10, 2005, pp. 20719-20723.
Linford, M. R. et al., “Alkyl Monolayers on Silicon Prepared from 1-Alkenes and Hydrogen-Terminated Silicon,” J. Am. Chem. Soc., vol. 117, No. 11, Mar. 22, 1995, pp. 3145-3155.
Nelles, Jürgen et al., “Functionalization of silicon nanoparticles via hydrosilylation with 1-alkenes, ” Colloid and Polymer Science, Kolloid-Zeitschrift and Zeitschrift Für Polymere, Springer, Berlin, Germany, vol. 285, No. 7, Jan. 20, 2007, pp. 729-736.
Sieval, A. B. et al., “High-Quality Alkyl Monolayers on Silicon Surfaces,” Advanced Materials, Wiley VCH, Weinheim, Germany, vol. 12, No. 19, Oct. 2, 2000, pp. 1457-1460.
Zhang, X. et al., “A new solution route to hydrogen-terminated silicon nanoparticles: synthesis, functionalization and water stability,” Nanotechnology, Institute of Physics Publishing, vol. 18, No. 9, Mar. 7, 2007, pp. 1-6.
Foley & Lardner LLP
Innovalight, Inc.
Nhu David
LandOfFree
Selective activation of hydrogen passivated silicon and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selective activation of hydrogen passivated silicon and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective activation of hydrogen passivated silicon and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2669497