Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Reexamination Certificate
2011-07-19
2011-07-19
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
C257S386000
Reexamination Certificate
active
07982246
ABSTRACT:
Provided are a selection transistor and a method of fabricating the same. A selection transistor can be formed on an active region in a semiconductor substrate to include a gate electrode that includes recessed portions of a sidewall of the gate electrode which are recessed inward adjacent lower portions of the gate electrode to define a T-shaped cross section of the gate electrode. A tunnel insulating layer can be located between the gate electrode and the active region.
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Cho Byung-kyu
Choi Dong-uk
Kang Hee-Soo
Lee Choong-ho
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Tran Thien F
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