Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-06-22
2008-12-16
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S230030, C365S225700
Reexamination Certificate
active
07466611
ABSTRACT:
A selection method of bit line redundancy repair includes the steps of providing a plurality of logical addresses of memory blocks in the normal cell array, generating a plurality of extra fuse signals, generating a code based on states of the extra fuse signals, the code matching a defective type of the memory blocks, and selecting a plurality of redundancy blocks in the redundancy cell array to replace the memory blocks according to the code. The apparatus includes a redundancy repair enable circuit for generating a redundancy enable signal based on logical addresses of the memory blocks, a controlling fuse circuit for sending a code matching a defective type of the memory blocks, and a redundancy decoder circuit for receiving the redundancy enable signal and the code to replace a plurality of memory blocks in the normal cell array with redundancy blocks.
REFERENCES:
patent: 6041006 (2000-03-01), Tsuchiya
patent: 6246618 (2001-06-01), Yamamoto et al.
patent: 7075848 (2006-07-01), Choi et al.
patent: 2005/0207244 (2005-09-01), Takenaka
Connolly Bove & Lodge & Hutz LLP
Elite Semiconductor Memory Technology Inc.
Hoang Huan
LandOfFree
Selection method of bit line redundancy repair and apparatus... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Selection method of bit line redundancy repair and apparatus..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selection method of bit line redundancy repair and apparatus... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4030184