Selectable open circuit and anti-fuse element

Details Selectable open circuit and anti-fuse element Selectable open circuit and anti-fuse element

2007-07-31

2007-07-31

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

C257S528000, C257S529000

Reexamination Certificate

active

11306663

ABSTRACT:
An integrated circuit is provided with a semiconductor substrate that is doped with a set concentration of an oxidizable dopant of a type that segregates to the top surface of a silicide when the semiconductor substrate is reacted to form such a silicide. A gate dielectric is on the semiconductor substrate, and a gate is on the gate dielectric. Source/drain junctions are in the semiconductor substrate. A silicide is on the source/drain junctions and dopant is segregated to the top surface of the silicide. The dopant on the top surface of the segregated dopant is oxidized to form an insulating layer of oxidized dopant above the silicide. An interlayer dielectric is above the semiconductor substrate. Contacts and connection points are in the interlayer dielectric to the insulating layer of oxidized dopant above the silicide.

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