Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-05-06
1999-07-06
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438710, 438720, 438700, H01L 2100
Patent
active
059197145
ABSTRACT:
An improvement in the box-in-box overlay measurement method has been achieved by forming the outer box from a segmented trench comprised of a number of concentric ridges that project upwards from the floor of the trench. When the segmented trench has been overfilled with tungsten (or similar metal) the excess metal is removed using either etch-back or chem. mech. polishing as the planarizing technique. Because of the presence of the ridges, the trench (i.e. the outer box) becomes reproducibly easy to see when the inner box (which will be etched from a second layer deposited on the first one) is being positioned inside it. Furthermore, the tendency for the outer box to be broken in critical places (often seen in the prior art) is now largely eliminated.
REFERENCES:
patent: 5292689 (1994-03-01), Cronin et al.
patent: 5362669 (1994-11-01), Boyd et al.
patent: 5728507 (1998-03-01), Rhoades et al.
patent: 5747375 (1998-05-01), Kaneko et al.
Chen Jeng-Horng
Shih Tsu
Ackerman Stephen B.
Deo Duy-Vu
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
Utech Benjamin
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