Seeding process in zone recrystallization

Details Seeding process in zone recrystallization Seeding process in zone recrystallization

1989-03-30

1990-07-31

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

15662071, 156DIG64, 156DIG88, C30B 1332, C30B 108, C30B 1908, C30B 2906

Patent

active

049448358

ABSTRACT:
An improved method of forming seed openings for zone-melting and recrystallization of polysilicon film on an insulator over silicon (SOI) is described. This method comprises forming a narrow discontinuous pattern of seed openings formed by an overlapping sub-pattern of discontinuous shaped openings. Alternatively, in an edge bead seed embodiment, a resist is removed from an SOI precursor structure, comprising an insulator on an Si wafer, thus exposing the peripheral edge of the insulator. The exposed insulator is then also removed to provide a peripheral edge seed opening to the underlying Si wafer.

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patent: 4670088 (1987-06-01), Tsaur et al.
patent: 4704186 (1987-11-01), Jastrzebski
patent: 4727047 (1988-02-01), Bozler et al.

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