Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2008-01-08
2008-01-08
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S002000, C117S003000, C117S951000
Reexamination Certificate
active
07316747
ABSTRACT:
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
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Search Report for ROC (Taiwan) Patent Application No. 094121084; Search Completion Date Apr. 14, 2007, 1 page.
Brady Mark
Carter, Jr. Calvin H.
Fechko, Jr. George J.
Hobgood Hudson McDonald
Jenny Jason Ronald
Cree Inc.
Hiteshew Felisa
Summa, Allan & Additon, P.A.
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