Second implanted matrix for agglomeration control and thermal st

Details Second implanted matrix for agglomeration control and thermal st Second implanted matrix for agglomeration control and thermal st

1997-10-28

1999-01-05

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257611, 257612, H01L 2976

Patent

active

058566988

ABSTRACT:
A semiconductor device on a semiconductor wafer, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.

REFERENCES:
patent: 4682407 (1987-07-01), Wilson
patent: 5313087 (1994-05-01), Chan et al.
patent: 5384485 (1995-01-01), Nishida et al.
patent: 5633177 (1997-05-01), Anjum
patent: 5637533 (1997-06-01), Choi
patent: 5776823 (1998-07-01), Agnello et al.

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