Second implanted matrix for agglomeration control and thermal st

Details Second implanted matrix for agglomeration control and thermal st Second implanted matrix for agglomeration control and thermal st

1996-11-27

1998-04-14

Dutton, Brian

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438532, 438533, 438659, H01L 21425

Patent

active

057390649

ABSTRACT:
A semiconductor device on a semiconductor wafer, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.

REFERENCES:
patent: 4682407 (1987-07-01), Wilson
patent: 5633177 (1997-05-01), Anjum

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