Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-04-09
2000-08-08
Dutton, Brian
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438528, H01L 2144, H01L 21425
Patent
active
061001899
ABSTRACT:
A semiconductor device on a semiconductor wafer and the devices made by the method, wherein improvements are realized to agglomeration control, resistivity, and thermal stability of a titanium disilicide layer on a polysilicon layer. Agglomeration control is achieved through the use of two carefully selected low dose barrier diffusion matrix implants into the polysilicon layer, one of which is situated at an interface between the layer of polysilicon and the resultant layer of titanium disilicide film after heat treatment, and the other of which is near the surface of the resultant layer of titanium disilicide film after heat treatment.
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Hu Yong-Jun
Klare Mark
Pan Pai-Hung
Dutton Brian
Micro)n Technology, Inc.
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