Sealed self aligned contacts using two nitrides process

Details Sealed self aligned contacts using two nitrides process Sealed self aligned contacts using two nitrides process

1990-04-05

1991-08-27

Hille, Rolf

357 65, 357 67, 357 71, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

050437909

ABSTRACT:
In a contact structure to a source/drain region (28) nearby a gate electrode (22), a contact sidewall through a thick dielectric is laterally displaced away from the S/D region to widen the contact; the contact sidewall is located over the gate electrode. Titanium silicide (34) is located upon the S/D. A remnant (36a) of a (conductive) TiN layer overlies the silicide and rises up along the sidewall of gate electrode insulation and onto insulation atop the gate electrode, and is insulated from the gate electrode thereby. A further nitride, preferably Si.sub.3 N.sub.4, is located under the thick dielectric and over part of the gate electrode insulation. The Si.sub.3 N.sub.4 adjoins the TiN to enclose the top and sides of the gate electrode with nitride. The bottom of the contact is formed by one nitride at some locations and by the other nitride at other locations. The contact sidewall through the thick dielectric preferably overlies the Si.sub.3 N.sub.4 but not the TiN. The TiN is effective as a dry etch stop and a wet etch stop, and the silicon nitride is effective as an isotropic etch stop. The conductive nitride is wholly contained within the contact, and the further nitride extends beyond said contact.

REFERENCES:
patent: 4556897 (1985-12-01), Yorikane et al.
patent: 4570331 (1986-02-01), Eaton, Jr. et al.
patent: 4686000 (1987-08-01), Heath
patent: 4784973 (1988-11-01), Stevens et al.
patent: 4811078 (1989-03-01), Tigelaar et al.
patent: 4897709 (1990-01-01), Yokoyama et al.

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