Sealed pores in low-k material damascene conductive structures

Details Sealed pores in low-k material damascene conductive structures Sealed pores in low-k material damascene conductive structures

2006-05-30

2006-05-30

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000

Reexamination Certificate

active

07052990

ABSTRACT:
An oxide layer is used to seal pores in porous low-dielectric constant materials, thus preventing the migration of subsequently deposited copper materials into the porous low-dielectric constant materials in damascene processes. The oxide layer is deposited over the inner surface of at least one pore along a sidewall of the patterned low-dielectric constant material. In one embodiment, the oxide layer is deposited using atomic layer deposition (ALD), and the oxide layer comprises SiO2.

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