Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-07-04
2006-07-04
Lee, Eddie (Department: 2811)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C257S640000
Reexamination Certificate
active
07071111
ABSTRACT:
The present invention relates to an integrated circuit having a sealed nitride layer. In one embodiment, a method of forming a sealing nitride layer overlaying a silicon oxide layer in a contact opening of an integrated circuit is disclosed. The method comprises, forming a second layer of nitride overlaying a first layer of nitride to form the sealing nitride layer. The second layer of nitride further overlays an exposed portion of a surface of a substrate in the contact opening and sidewalls of the contact opening. Using reactive ion etching (RIE etch) without a mask to remove a portion of the second nitride layer adjacent the surface of the substrate in the contact opening to expose a portion of the surface of the substrate in the contact opening without removing portions of the second nitride layer covering the sidewalls of the contact opening.
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S. Wollf and R.N. Tauber, “Silicon Processing for the VLSi Era: vol. 1—Process Technology,” Lattice Press, Sunset Beach, CA (1986), pp. 321-324.
Fogg and Associates LLC
Intersil America's Inc.
Lee Eddie
Lundberg Scott V.
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