Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-10-05
2010-02-16
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S170000, C257SE23001
Reexamination Certificate
active
07663159
ABSTRACT:
Techniques for an integrated circuit device are provided. The integrated circuit device includes a substrate, an active circuit area, and a dielectric layer. A seal ring surrounds the active circuit area. At least one corner area of the integrated circuit includes a plurality of corner band stacks. Each of the plurality of corner band stacks is oriented at about a predetermined angle and extends from a first sawing trace to a second sawing trace. In a specific embodiment, if a structural fault in the at least one corner area occurs, the structural fault is predisposed to extend at about the predetermined angle.
REFERENCES:
patent: 6028347 (2000-02-01), Sauber et al.
patent: 6362524 (2002-03-01), Blish et al.
patent: 6412786 (2002-07-01), Pan
patent: 6509622 (2003-01-01), Ma et al.
patent: 2004/0043609 (2004-03-01), Yamamoto
patent: 2006/0055005 (2006-03-01), Furusawa et al.
Monbleau Davienne
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend and Townsend / and Crew LLP
Trinh Hoa B
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