Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-05-06
2009-02-24
Mai, Anh D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S710000, C257SE21519, C228S124600, C228S226000
Reexamination Certificate
active
07495333
ABSTRACT:
A hermetic seal cover capable of inhibiting defects such as voids from generating in sealing a package, and a method of manufacturing the seal cover are provided. The hermetic seal cover comprises: a seal cover main body; a Ni plating layer applied onto a surface of the seal cover main body; and a Au—Sn brazing material layer fusion bonded to a surface of the Ni plating layer, and is characterized by a Ni—Sn ally layer disposed between the Ni plating layer and the Au—Sn brazing material layer. It is preferable if the Ni—Sn alloy layer has a thickness of 0.6-5.0 μm. It is also preferable if Au—Sn brazing material layer has a Sn content of 20.65-23.5 wt %.
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Kusamori Hiroyuki
Miyazaki Ken-ichi
Mai Anh D
Roberts & Roberts, LLP
Tanaka Kikinzoku Kogyo K.K.
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