Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-31
2006-01-31
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C257S737000, C257S738000, C257S781000, C257S786000
Reexamination Certificate
active
06992001
ABSTRACT:
A method for forming an integrated circuit interconnect pad is described. In one embodiment a method of forming an integrated circuit comprises screen printing a conductive paste onto a terminal metalization pad and curing the conductive paste in an inert or reducing atmosphere at an elevated temperature to form an under-bump metalization layer of an interconnect pad. The elevated temperature is below a melting temperature of the terminal metalization pad.
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Kulicke and Soffa Industries Inc.
Spletzer, Sr. Christopher M.
Tran Thanh Y.
Zarabian Amir
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