SCR matrix storage device

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S105000, C365S180000

Reexamination Certificate

active

07916530

ABSTRACT:
In various embodiments, an addressable storage matrix includes a first plurality of intersection points, at least some of which are bridged by two-terminal non-linear elements that exhibit a threshold below which current flow is significantly lower than if the threshold is exceeded, as well as, disposed at each intersection point bridged by a non-linear element, a programmable material in series with the non-linear element and determining a bit state for the corresponding intersection point.

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