SCR-ESD structures with shallow trench isolation

Details SCR-ESD structures with shallow trench isolation SCR-ESD structures with shallow trench isolation

2006-06-13

2006-06-13

Flynn, Nathann J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S362000, C257S361000, C438S309000

Reexamination Certificate

active

07061051

ABSTRACT:
A novel device structure and process are described for an SCR ESD protection device used with shallow trench isolation structures. The invention incorporates an SCR device with all SCR elements essentially contained within the same active area without STI elements being interposed between the device anode and cathode elements. This enhances ESD performance by eliminating thermal degradation effects caused by interposing STI structures, and enhances the parasitic bipolar characteristics essential to ESD event turn on. Enabling this unique design is the use of an insulation oxide surface feature which prevents the formation of contact salicides in unwanted areas. This design is especially suited to silicon-on-insulator design, as well as conventional SCR and LVTSCR designs.

REFERENCES:
patent: 5012317 (1991-04-01), Rountre
patent: 5530612 (1996-06-01), Maloney
patent: 5629544 (1997-05-01), Voldman et al.
patent: 5903424 (1999-05-01), Tailliet
patent: 6172403 (2001-01-01), Chen
patent: 6236087 (2001-05-01), Daly et al.
patent: 6268639 (2001-07-01), Li et al.
patent: 6465848 (2002-10-01), Ker et al.
patent: 6605493 (2003-08-01), Yu
patent: 6872987 (2005-03-01), Yu

Affiliated with

Also associated with

Rating

SCR-ESD structures with shallow trench isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SCR-ESD structures with shallow trench isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SCR-ESD structures with shallow trench isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3662147