Schottky tunneling device

Details Schottky tunneling device Schottky tunneling device

1996-01-16

1999-10-05

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257331, 257472, 257 77, 257902, 257155, 257289, 257284, 257403, 257263, 257264, 257266, 257267, 257269, H01L 2978, H01L 2947

Patent

active

059628936

ABSTRACT:
An n-semiconductor layer is arranged on a low-resistance n-substrate. A drain electrode is in ohmic contact with the n-substrate. A source electrode forms a Schottky junction with the n-semiconductor layer. A gate electrode is arranged adjacent to the source electrode on the n-semiconductor layer through a gate insulating film. When a voltage is applied to the gate electrode to lower the Schottky barrier height at the interface between the source electrode and the n-semiconductor layer, electrons are injected from the source electrode into the n-semiconductor layer, and a current flows in the semiconductor device. A diffusion layer which prevents a decrease in manufacturing time is not required to form in the n-semiconductor layer, and a channel which causes an increase in ON state voltage is not present.

REFERENCES:
patent: 5040034 (1991-08-01), Murakami et al.
patent: 5049953 (1991-09-01), Mihara et al.
patent: 5396085 (1995-03-01), Baliga
patent: 5545905 (1996-08-01), Muraoka et al.
S. M. Sze, Physics of Semiconductor Devices, 2nd ed., 1981, pp. 245-304.
C. J. Koeneke, et al., "Shottky Mosfet for VLSI", IEDM 1981, (pp. 367-370).
T. Mochizuki, et al., "An n-Channel MOSFET With Shottky Source and Drain", IEEE Electron Device Letters, vol. EDL-5, No. 4, Apr. 1984, (pp. 108-111).
T. Yachi, et al., "A New Method Utilizing Ti-Silicide Oxidation for the Fabrication of a MOSFET with a Self-Aligned Schottky Source/Drain", IEEE Electron Device Letters, vol. EDL-5, No. 8, Aug. 1983, (pp. 277-279).

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