Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S287000, C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000, C257S507000, C257S618000, C257S623000, C438S149000, C438S167000, C438S311000, C438S578000, C438S931000
Reexamination Certificate
active
10507757
ABSTRACT:
The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.
REFERENCES:
patent: 4045248 (1977-08-01), Shannon et al.
patent: 4680601 (1987-07-01), Mitlehner et al.
patent: 4888304 (1989-12-01), Nakagawa et al.
patent: 4983538 (1991-01-01), Gotou
patent: 5880491 (1999-03-01), Soref et al.
patent: 5898210 (1999-04-01), Han et al.
patent: 6391799 (2002-05-01), Di Cioccio
patent: 6501145 (2002-12-01), Kaminski et al.
patent: 6509613 (2003-01-01), En et al.
patent: 6566158 (2003-05-01), Eriksen et al.
patent: 6566680 (2003-05-01), Krivokapic
patent: 6573534 (2003-06-01), Kumar et al.
patent: 6576973 (2003-06-01), Collard et al.
patent: 6689669 (2004-02-01), Kurtz et al.
patent: 6784489 (2004-08-01), Menegoli
patent: 6903373 (2005-06-01), Lotfi et al.
patent: 2002/0187622 (2002-12-01), Bartsch et al.
patent: 2003/0119249 (2003-06-01), Swanson et al.
patent: 2005/0260821 (2005-11-01), Van Zeghbroeck et al.
patent: 1 111 688 (2001-06-01), None
patent: 01023569 (1989-01-01), None
patent: 11074498 (1999-03-01), None
patent: WO 9727629 (1997-07-01), None
patent: WO 98/56043 (1998-12-01), None
patent: WO 99/39371 (1999-08-01), None
patent: WO 01/37328 (2001-05-01), None
Billon Thierry
Daval Nicolas
Templier François
Commissariat a l''Energie Atomique
Soward Ida M.
Thelen Reid Brown Raysman & Steiner LLP
LandOfFree
Schottky power diode with SiCOI substrate and process for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Schottky power diode with SiCOI substrate and process for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky power diode with SiCOI substrate and process for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3748004