Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1997-02-06
1999-08-24
Chaudhari, Chandra
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
438104, H01L 2166
Patent
active
059435526
ABSTRACT:
A novel and highly sensitive method for detecting various transition metals at the surface and subsurface region of single-crystal silicon wafers by capacitance-voltage measurement of reverse-biased Schottky diodes at elevated temperatures.
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Koveshnikov Sergei Viktor
Mollenkopf Howard
Chaudhari Chandra
SEH America Inc.
Thompson Craig
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