Schottky diode with high field breakdown and low reverse...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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Details

C438S575000, C438S576000, C438S580000, C438S583000

Reexamination Certificate

active

06825073

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a Schottky diode semiconductor devices, specifically, to a Schottky diode device having less leakage current and high field breakdown and a method of manufacturing the same.
BACKGROUND OF THE INVENTION
Schottky diodes are widely used as voltage rectifiers in many power switching applications, such as switching-mode power supplies, electric motor, switching of communication device, industry automation and electronic automation and so on. Though the Schottky diodes have a high speed switching characteristics, the large reverse leakage current and low breakdown voltage will limit the operation of Schottky diodes to a high reverse voltage and with a higher temperature.
It is well known that a p+ guard ring diffusion region surround the periphery of the active Schottky contact area could increase the reverse breakdown voltage (U.S. Pat. No. 3,541,403). The p+ guard ring diffusion region is formed from boron-nitride diffusion source or by boron or BF
2
+
ion implantation. However, the high dose boron ion implantation will induce surface damage and result in high leakage current. Also, the p-n junction curvature effect, referred to S. M. Sze: “Physics of Semiconductor Devices”, 2
nd
, Chapter 2, will significantly affect the reverse leakage current and breakdown voltage. It needs a very long term thermal cycle at high temperature to drive in the boron dopant deep enough into silicon substrate to form a large p-n junction curvature to reduce the reverse leakage current and increase the breakdown voltage.
An object of the present invention is to propose a new method of forming a high switching speed Schottky diode with high breakdown voltage and low leakage current.
SUMMARY OF THE INVENTION
A Schottky diode structure and a method of making the same are disclosed. The method comprises following steps: firstly, an n+ semiconductor substrate having a first conductive layer and an n−epi layer is provided. Then a first oxide layer is formed on the n−epi layer. A patterning step to define guard-ring (GR) regions and the first oxide layer at this region is etched out. After stripping the photoresist, a polycrystalline silicon layer is deposited by LPCVD or APCVD. Then, the boron or BF
2
+
ion implantation is performed. Thereafter, a high temperature annealing process to drive in the boron ions through the polycrystalline silicon layer into the n−epi layer is carried out using the doped polycrystalline silicon layer as a diffusion source. Subsequently, an oxidation process to fully oxidize the polycrystalline silicon layer into thermal oxide and drive in the boron ions deep into silicon substrate is then performed. A second mask and etch steps are then implemented to open the active area (AA) regions. A barrier metal deposition and metal silicidation process is then done. After the top metal formation, the third mask and etch steps are then implemented to define the anode. Finally, a backside metal layer is then formed and served as a cathode.


REFERENCES:
patent: 5109256 (1992-04-01), De Long
patent: 5163179 (1992-11-01), Pellegrini
patent: 5888891 (1999-03-01), Gould
patent: 6184564 (2001-02-01), Gould
patent: 6211560 (2001-04-01), Jimenez et al.
patent: 6225653 (2001-05-01), Igel et al.
patent: 6624030 (2003-09-01), Chang et al.
patent: 6727525 (2004-04-01), Goerlach
patent: 6765264 (2004-07-01), Chang et al.
patent: 2003/0096464 (2003-05-01), Lanois
patent: 2004/0110330 (2004-06-01), Collard

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