Schottky bipolar two-port random-access memory

Details Schottky bipolar two-port random-access memory Schottky bipolar two-port random-access memory

1977-10-31

1979-02-06

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365154, 307238, G11C 1140

Patent

active

041387392

ABSTRACT:
High emitter-coupled logic switching speeds and low standby power are achieved with a dual-port RAM cell in which two NPN Schottky transistors in a non-saturable bistable flip-flop configuration are flanked by a second pair of transistors whose collectors are individually coupled to the flip-flop collectors. The two output digit lines of the RAM are individually connected to the emitters of the flanking transistors, and their bases are individually coupled to the two select lines. A read signal on either select line enables a flanking transistor to sense the state of the RAM. Writing is accomplished by applying a high logic signal to both select lines and one digit line while the other digit line is dropped to a low state.

REFERENCES:
patent: 3675218 (1972-07-01), Sechler
patent: 3753247 (1973-08-01), Rauchman
patent: 3979735 (1976-09-01), Payne
IBM Tech. Dis. Bul., vol. 14, #6, Nov. 1971, "Fast NDRO memory circuits for integration" R. D. More, p. 1666.

Affiliated with

Also associated with

Rating

Schottky bipolar two-port random-access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky bipolar two-port random-access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky bipolar two-port random-access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-894583