Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer
Patent
1976-07-30
1979-02-27
Miller, Jr., Stanley D.
Batteries: thermoelectric and photoelectric
Thermoelectric
Radiation pyrometer
136 89SJ, 136 89TF, 357 2, 357 30, 427 84, H01L 2948, H01L 3100
Patent
active
041421957
ABSTRACT:
A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate is a second layer of amorphous silicon prepared by a glow discharge in silane. On the second layer opposite the first layer is a metallic film forming a surface barrier junction therebetween, i.e. a Schottky barrier. The first layer is doped so as to make an ohmic contact with the substrate. Preferably the doping concentration of the first layer is graded so the dopant concentration is maximum at the interface of the first layer and the substrate. In a second embodiment of the Schottky barrier semiconductor device an intermediate layer is between and contiguous to both the first layer and the substrate. The intermediate layer facilitates in making ohmic contact between the amorphous silicon and the substrate. Annealing and heat treating steps are performed in the fabrication of the Schottky barrier device to increase device efficiency.
REFERENCES:
patent: 3424661 (1969-01-01), Androshuk et al.
patent: 3473959 (1969-10-01), Ehinger et al.
patent: 3958262 (1976-05-01), Mescin
patent: 3961997 (1976-06-01), Chu
patent: 3978333 (1976-08-01), Crisman et al.
patent: 4064521 (1977-12-01), Carlson
W. E. Spear, "Localized States in Amorphous Semiconductors" Proceedings of the Fifth International Conference on Amorphous and Liquid Semiconductors, Sep. 3-8, 1973, pp. 2-11.
W. Fuhs et al., "Heterojunctions of Amorphous Silicon and Silicon Single Crystals" AIP Conference Proceedings No. 20, Mar. 20-22, 1974, pp. 345-350.
H. Mell, Proceedings of the Fifth Int. Conf. on Amorphous and Liquid Semiconductor, Fed. Rep. of Germany, Sep. 3-8, 1973, vol. I, pp. 217-218.
M. V. Schneider, "Schottky Barrier Photodiodes with Antireflection Coating," The Bell System Technical Journal, Nov. 1966, pp. 1611-1627.
R. C. Chittick, "Properties of Glow-Discharge Deposited Amorphous Germanium and Silicon," J. of Non-Crystalline Solids, vol. 3, pp. 255-270, 1970.
R. C. Chittick et al., "The Preparation and Properties of Amorphous Silicon," J. of the Electochemical Society, vol. 116, pp. 77-81, 1969.
Carlson David E.
Triano, Jr. Alfred R.
Wronski Christopher R.
Christoffersen H.
Davie James W.
Miller, Jr. Stanley D.
Morris Birgit E.
RCA Corporation
LandOfFree
Schottky barrier semiconductor device and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Schottky barrier semiconductor device and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky barrier semiconductor device and method of making same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-725218