Schottky-barrier mosfet manufacturing method using isotropic...

Details Schottky-barrier mosfet manufacturing method using isotropic... Schottky-barrier mosfet manufacturing method using isotropic...

2007-11-06

2007-11-06

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S092000, C438S570000, C257SE21106, C257SE21131

Reexamination Certificate

active

10957913

ABSTRACT:
A method of fabricating a transistor device for regulating the flow of electric current is provided wherein the device has Schottky-barrier metal source-drain contacts. The method, in one embodiment, utilizes an isotropic etch process prior to the formation of the metal source-drain contacts to provide better control of the Schottky-barrier junction location to a channel region. The improvements from the controllability of the placement of the Schottky-barrier junction enables additional drive current and optimizes device performance, thereby significantly improving manufacturability.

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patent: WO 03/015181 (2003-02-01), None

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