Schottky barrier diode having a mesa structure

Details Schottky barrier diode having a mesa structure Schottky barrier diode having a mesa structure

1996-12-31

1997-11-11

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

257109, 257472, 257473, H01L 2974, H01L 27095, H01L 2947

Patent

active

056867530

ABSTRACT:
In a Schottky barrier diode, concentration of an electrical field at an edge of an insulation layer is suppressed to improve the reverse breakdown voltage. An n- layer of a compound semiconductor substrate having an n+ layer and the n- layer is configured in the form of a mesa. An insulation layer is formed on at least a skirt portion and a slant portion of the mesa. An anode is formed on the insulation layer and n- layer, and a cathode is formed on the n+ layer. Thus, concentration of an electrical field at an edge of the insulation layer is canceled at least in part by an electrical field generated at the anode on the slant portion to improve the reverse breakdown voltage.

REFERENCES:
patent: 5041881 (1991-08-01), Bishop et al.
patent: 5365102 (1994-11-01), Mehrotra et al.
Patent Abstracts Of Japan, vol. 4, No. 145 (E-029), 14 Oct. 1980 & JP-A-55 095374 (NEC CORP), 19 Jul. 1980, abstract.
Patent Abstracts Of Japan, vol. 4, No. 185 (E-038), 19 Dec. 1980 & JP-A-55 128879 (NEC CORP), 6 Oct. 1980, abstract.
European Search Report dated Jun. 14, 1996.

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