Scanning electron microscope

Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

06885001

ABSTRACT:
The present invention is intended to prevent the deterioration of resolution due to increase in off-axis aberration resulting from the deviation of a primary electron bean from the optical axis of a scanning electron microscope. A scanning electron microscope is provided with an image shifting deflector system including two deflectors disposed respectively at upper and lower stages. The deflector disposed at the lower stage is a multipole electrostatic deflecting electrode and is disposed in an objective. Even if the distance of image shifting is great, an image of a high resolution can be formed and dimensions can be measured in a high accuracy. The SEM is able to achieving precision inspection at a high throughput when applied to inspection in semiconductor device fabricating processes that process a wafer having a large area and provided with very minute circuit elements.

REFERENCES:
patent: 4769543 (1988-09-01), Plies
patent: 4943722 (1990-07-01), Breton et al.
patent: 5872358 (1999-02-01), Todokoro et al.
patent: 5874735 (1999-02-01), Matsumoto et al.
patent: 5900629 (1999-05-01), Todokoro et al.
patent: 6069356 (2000-05-01), Todokoro et al.
patent: 6084238 (2000-07-01), Todokoro et al.
patent: 6107633 (2000-08-01), Frosien et al.
patent: 6566658 (2003-05-01), Okubo
patent: 6787772 (2004-09-01), Ose et al.
patent: 56-50051 (1981-05-01), None
patent: 58-147948 (1983-09-01), None
patent: 62-219446 (1987-09-01), None
patent: 09-171791 (1997-06-01), None
patent: 11-067130 (1999-03-01), None
patent: A411067130 (1999-03-01), None
patent: 11-120950 (1999-04-01), None
“MOL (Moving Objective Lens) Formulation of Deflective Aberration Free System”,Optik, Eiichi Goto and Takasji Somo, 48 (1977) No. 3, pp. 255-270.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Scanning electron microscope does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Scanning electron microscope, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scanning electron microscope will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3399960

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.